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Microelectronics IPU CSC notes and question paper free download - Dipesh S - 05-03-2017
SYLLABUS:-
UNIT I
Semiconductor, VLSI device technology, VLSI design flow, MOS Capacitance fundamentals, MOSFET principles and characteristics, MOS transistor theory, MOS structure, enhancement & depletion transistor, CMOS & NMOS process technology, explanation of different stages in fabrication, Threshold voltage, MOS device design equations
UNIT II
MOSFET Operation and modelling, Short and narrow channel effects, Radiation and hot-carrier effects, Breakdown, LDD, CMOS latch-up, CMOS Device design considerations & performance factors, Brief overview of MOSFET CAD SPICE model- different levels.
UNIT III
CMOS inverter, DC characteristics, static load MOS inverter, pull up/pull down ratio, Static & Dynamic power dissipation, switching characteristics & inter connection effects, Rise time, fall time delays, Noise margin, power consumption in CMOS.
UNIT IV
Basic I.C. processing step, Clean room concept, wafer cleaning, oxidation, diffusion. Ficks laws, Ion implantation. Epitaxy, Basics of vacuum deposition, Chemical vapour deposition, high and low temperature/pressure depositions. Etching techniques, integrated circuit packaging.